Makaleler
42
Tümü (42)
SCI-E, SSCI, AHCI (34)
SCI-E, SSCI, AHCI, ESCI (34)
Scopus (34)
TRDizin (8)
1. The role of Sn2+/Sn4+ precursors on the structural and optical properties of Yb-based oxide thin films
Journal of Materials Science: Materials in Electronics
, cilt.37, sa.19, 2026 (SCI-Expanded, Scopus)
2. MA₂CuCl₄ Perovskit Malzemenin Sentezlenmesi, Yapısal ve Optik Karakterizasyonu
Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi
, cilt.30, sa.1, ss.206-213, 2026 (TRDizin)
6. Investigation of MASnIxBr3−x (x = 3, 2, 1, 0) Perovskite Thin Films Produced by Ultrasonic Spray Pyrolysis Method
Arabian Journal for Science and Engineering
, cilt.49, sa.7, ss.10085-10094, 2024 (SCI-Expanded, Scopus)
9. Comparison of Cu, Al, and Zr metallic contacts for chalcopyrite CIGS thin-film
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.14, 2023 (SCI-Expanded, Scopus)
13. The response of high barrier Schottky diodes to light illumination
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.4, ss.4448-4456, 2021 (SCI-Expanded, Scopus)
24. Structural, morphological and optical properties of Yb2Cu2O5 thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.21, ss.19457-19462, 2019 (SCI-Expanded, Scopus)
28. n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri
Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi
, cilt.13, sa.2, ss.18-24, 2018 (TRDizin)
36. Time Dependence of Current-Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
, cilt.66, ss.576-580, 2011 (SCI-Expanded, Scopus)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
27
1. The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)
2. The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)
3. The Analysis of Capacitance-Voltage and Conductance voltage Characteristics of Zr/p-Si Schottky Diodes with a Native Oxide Interfacial Layer at High Frequencies
International Natural Science, Engineering and Materials Technology Conference (NEM 2019), 9 - 10 Eylül 2019, ss.87, (Özet Bildiri)
4. Uv-Visible study of Yb2Cu2O5 thin film grown by thermal oxidation of Yb/Cu layers
2nd International Congress on Semiconductor materials and Devices, 28 - 30 Ağustos 2018, ss.110, (Özet Bildiri)
5. Annealing Effects on Current-Voltage Characteristics of Yb/p-Si Schottky Diodes
Turkish Physical Society 34th International Physics Congress, Bodrum/Muğla, Türkiye, 5 - 09 Eylül 2018, ss.264, (Özet Bildiri)
6. Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, ss.130, (Özet Bildiri)
7. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes, Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, September 6-10 2017, Abstract Book p. 348.
Turkish Physical Society 33rd International Physics Congress, 6 - 10 Eylül 2017, ss.348, (Özet Bildiri)
8. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes
Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Türkiye, 6 - 10 Eylül 2017, cilt.1, sa.1, ss.348, (Tam Metin Bildiri)
9. Al/CIGS/Mo SCHOTTKY DİYOTLARININ ELEKTRİKSEL KARAKTERİZASYONU
ADIM FİZİK GÜNLERİ VI, Balıkesir, Türkiye, 19 - 21 Temmuz 2017, ss.71, (Özet Bildiri)
11. Characterization of GaInP Nanofibers Prepared by Electrospinning Process
iccesen 2016, 19 - 24 Ekim 2016, (Özet Bildiri)
12. Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.172, (Tam Metin Bildiri)
13. The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.162, (Tam Metin Bildiri)
14. Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference (ISSTC-2014), 13 - 15 Ocak 2014, ss.99, (Özet Bildiri)
15. D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Türkiye, 13 - 14 Ocak 2014, ss.98, (Özet Bildiri)
16. Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode
Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Türkiye, 2 - 05 Eylül 2013, cilt.1, sa.1, ss.527, (Tam Metin Bildiri)
17. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5 - 08 Eylül 2012, ss.605, (Özet Bildiri)
18. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes, 05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi.
05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 08 Eylül 2012, cilt.1, sa.1, ss.605, (Tam Metin Bildiri)
19. The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Türkiye, 6 - 09 Eylül 2011, cilt.1, sa.1, ss.655, (Tam Metin Bildiri)
20. The analysis of hydrostatic pressure dependence of Au/n-GaAs/Au-Ge Schottky diode parameters with different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011, ss.743, (Özet Bildiri)
21. Neutron irradiation effects on I- V characteristics of Au/n-GaAs Schottky diodes
11th Neutron and Ion Dosimetry Symposium (NEUDOS-11), 12 - 16 Ekim 2009, ss.25, (Özet Bildiri)
22. Analysis of current-voltagecharacteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocompositeinterfacial layer,
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, ss.437, (Özet Bildiri)
23. Radiation hazards on electrical properties of Schottky diodes
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, (Özet Bildiri)
24. Electrical characterization of p-type Silicon based on conducting polymer
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 Ağustos 2009, ss.448, (Özet Bildiri)
25. Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 Ağustos 2007, ss.534, (Özet Bildiri)
26. Temperature dependence of electrical parameters of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 Ağustos 2007, ss.529, (Özet Bildiri)
27. ÖZDEMİR A.F., ALDEMİR D. A , KÖKCE A., ALTINDAL S., Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi., Malatya, Türkiye, 28 - 31 Ağustos 2007, cilt.1, sa.1, ss.130, (Tam Metin Bildiri)