Makaleler
43
Tümü (43)
SCI-E, SSCI, AHCI (35)
SCI-E, SSCI, AHCI, ESCI (35)
Scopus (35)
TRDizin (8)
1. The role of Sn2+/Sn4+ precursors on the structural and optical properties of Yb-based oxide thin films
Journal of Materials Science: Materials in Electronics
, cilt.37, sa.19, 2026 (SCI-Expanded, Scopus)
2. MA₂CuCl₄ Perovskit Malzemenin Sentezlenmesi, Yapısal ve Optik Karakterizasyonu
Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi
, cilt.30, sa.1, ss.206-213, 2026 (TRDizin)
7. Investigation of MASnIxBr3−x (x = 3, 2, 1, 0) Perovskite Thin Films Produced by Ultrasonic Spray Pyrolysis Method
Arabian Journal for Science and Engineering
, cilt.49, sa.7, ss.10085-10094, 2024 (SCI-Expanded, Scopus)
10. Comparison of Cu, Al, and Zr metallic contacts for chalcopyrite CIGS thin-film
Journal of Materials Science: Materials in Electronics
, cilt.34, sa.14, 2023 (SCI-Expanded, Scopus)
14. The response of high barrier Schottky diodes to light illumination
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.4, ss.4448-4456, 2021 (SCI-Expanded, Scopus)
25. Structural, morphological and optical properties of Yb2Cu2O5 thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.21, ss.19457-19462, 2019 (SCI-Expanded, Scopus)
29. n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri
Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi
, cilt.13, sa.2, ss.18-24, 2018 (TRDizin)
37. Time Dependence of Current-Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
, cilt.66, ss.576-580, 2011 (SCI-Expanded, Scopus)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
27
1. The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)
2. The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)
3. The Analysis of Capacitance-Voltage and Conductance voltage Characteristics of Zr/p-Si Schottky Diodes with a Native Oxide Interfacial Layer at High Frequencies
International Natural Science, Engineering and Materials Technology Conference (NEM 2019), 9 - 10 Eylül 2019, ss.87, (Özet Bildiri)
4. Uv-Visible study of Yb2Cu2O5 thin film grown by thermal oxidation of Yb/Cu layers
2nd International Congress on Semiconductor materials and Devices, 28 - 30 Ağustos 2018, ss.110, (Özet Bildiri)
5. Annealing Effects on Current-Voltage Characteristics of Yb/p-Si Schottky Diodes
Turkish Physical Society 34th International Physics Congress, Bodrum/Muğla, Türkiye, 5 - 09 Eylül 2018, ss.264, (Özet Bildiri)
6. Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, ss.130, (Özet Bildiri)
7. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes
Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Türkiye, 6 - 10 Eylül 2017, cilt.1, sa.1, ss.348, (Tam Metin Bildiri)
8. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes, Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, September 6-10 2017, Abstract Book p. 348.
Turkish Physical Society 33rd International Physics Congress, 6 - 10 Eylül 2017, ss.348, (Özet Bildiri)
10. Al/CIGS/Mo SCHOTTKY DİYOTLARININ ELEKTRİKSEL KARAKTERİZASYONU
ADIM FİZİK GÜNLERİ VI, Balıkesir, Türkiye, 19 - 21 Temmuz 2017, ss.71, (Özet Bildiri)
11. Characterization of GaInP Nanofibers Prepared by Electrospinning Process
iccesen 2016, 19 - 24 Ekim 2016, (Özet Bildiri)
12. Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.172, (Tam Metin Bildiri)
13. The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.162, (Tam Metin Bildiri)
14. Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference (ISSTC-2014), 13 - 15 Ocak 2014, ss.99, (Özet Bildiri)
15. D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Türkiye, 13 - 14 Ocak 2014, ss.98, (Özet Bildiri)
16. Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode
Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Türkiye, 2 - 05 Eylül 2013, cilt.1, sa.1, ss.527, (Tam Metin Bildiri)
17. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes, 05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi.
05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 08 Eylül 2012, cilt.1, sa.1, ss.605, (Tam Metin Bildiri)
18. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5 - 08 Eylül 2012, ss.605, (Özet Bildiri)
19. The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Türkiye, 6 - 09 Eylül 2011, cilt.1, sa.1, ss.655, (Tam Metin Bildiri)
20. The analysis of hydrostatic pressure dependence of Au/n-GaAs/Au-Ge Schottky diode parameters with different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011, ss.743, (Özet Bildiri)
21. Neutron irradiation effects on I- V characteristics of Au/n-GaAs Schottky diodes
11th Neutron and Ion Dosimetry Symposium (NEUDOS-11), 12 - 16 Ekim 2009, ss.25, (Özet Bildiri)
22. Electrical characterization of p-type Silicon based on conducting polymer
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 Ağustos 2009, ss.448, (Özet Bildiri)
23. Radiation hazards on electrical properties of Schottky diodes
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, (Özet Bildiri)
24. Analysis of current-voltagecharacteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocompositeinterfacial layer,
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, ss.437, (Özet Bildiri)
25. Temperature dependence of electrical parameters of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 Ağustos 2007, ss.529, (Özet Bildiri)
26. ÖZDEMİR A.F., ALDEMİR D. A , KÖKCE A., ALTINDAL S., Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi., Malatya, Türkiye, 28 - 31 Ağustos 2007, cilt.1, sa.1, ss.130, (Tam Metin Bildiri)
27. Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 Ağustos 2007, ss.534, (Özet Bildiri)