Diodes are one of the most important and widely used components of electronic circuits. These devices can be damaged especially when they are used in radiation fields whose effects depend on radiation type and energy. To investigate these effects, the Au/n-GaAs type Schottky diodes have been irradiated by neutrons emitted from a Cf-252 source which provides neutrons at an average energy of 2.14 MeV. The diode parameters barrier height (Phi(b0)), ideality factor (n) and series resistance (R-s) have been obtained from forward current voltage (I-V) characteristics before and after irradiation and the results are discussed. (C) 2010 Elsevier Ltd. All rights reserved.