Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates
ACTA PHYSICA POLONICA A, vol.132, no.3, pp.638-641, 2017 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 132 Issue: 3
- Publication Date: 2017
- Doi Number: 10.12693/aphyspola.132.638
- Journal Name: ACTA PHYSICA POLONICA A
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.638-641
- Süleyman Demirel University Affiliated: Yes
Abstract
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I - V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.