Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

Bezir N., Evcin A., OKCU H., KAYALI R., KALELİ M., ALDEMİR D. A.

ACTA PHYSICA POLONICA A, vol.132, no.3, pp.638-641, 2017 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 132 Issue: 3
  • Publication Date: 2017
  • Doi Number: 10.12693/aphyspola.132.638
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.638-641


GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I - V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.