The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALDEMİR D. A.

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 October 2019, pp.111, (Summary Text)

  • Publication Type: Conference Paper / Summary Text
  • Page Numbers: pp.111
  • Süleyman Demirel University Affiliated: Yes