The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K


GÜÇLÜ Ç. Ş. , ÖZDEMİR A. F. , ALDEMİR D. A.

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 October 2019, pp.111

  • Publication Type: Conference Paper / Summary Text
  • Page Numbers: pp.111