The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters


ÖZDEMİR A. F. , OZSOY T., KANSIZ Y., SANCAK M., KÖKCE A. , UÇAR N. , ...More

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.60, no.1, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 60 Issue: 1
  • Publication Date: 2012
  • Doi Number: 10.1051/epjap/2012110483
  • Title of Journal : EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS

Abstract

The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.