The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters

ÖZDEMİR, Ahmet; OZSOY, T.; KANSIZ, Y.; SANCAK, M.; KÖKCE, Ali; UÇAR, Nazım; ALDEMİR, Durmuş

doi:10.1051/epjap/2012110483

The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters

ÖZDEMİR A. F., OZSOY T., KANSIZ Y., SANCAK M., KÖKCE A., UÇAR N., ...Daha Fazla

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.60, sa.1, 2012 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 60 Sayı: 1
Basım Tarihi: 2012
Doi Numarası: 10.1051/epjap/2012110483
Dergi Adı: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Süleyman Demirel Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.