The evaluation of the current-voltage and capacitance-voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

Lapa H. E. , Guclu C. S. , ALDEMİR D. A. , ÖZDEMİR A. F.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.126, no.6, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 6
  • Publication Date: 2020
  • Doi Number: 10.1007/s00339-020-03662-8
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Keywords: High barrier height, Silicon, Schottky diodes, Rare Earth metals, Electrical properties, INTERFACE STATE DENSITY, ELECTRON-TRANSPORT, PARAMETERS, CONTACTS, SURFACE, MIS, SILICON, DEPENDENCE, BEHAVIOR, METALS
  • Süleyman Demirel University Affiliated: Yes


The rare-earth metal Yb (Ytterbium) which has a very low work function of 2.60 eV has been shown to high quality Schottky contacts to p-Si. Two distinct linear regions in the semi-logarithmic current density-voltage plot are observed for Yb/p-Si Schottky diodes. From the linear regions, the very high zero-bias barrier height values are determined as 0.83 and 0.88 eV. The value of rectification ratio is in order of similar to 10(6) which is close to the commercial Schottky diodes. From Cheung functions, the value of series resistance is found to be 12.60 Omega. Furthermore, the important contact parameters of the diodes are calculated by using modified Norde method. The contact parameters obtained from reverse bias capacitance-voltage-frequency measurements do not show an important dependence on frequency. The calculated values of acceptor concentration are in close agreement with the value of doping concentration of the p-Si wafer used in this study.