The electrical and photovoltaic properties of Yb/CIGS thin film Schottky photodiode were studied. A low saturation current density of 3.2 x 10(-9) A/cm(2) and a high zero-bias barrier height of 0.92 eV were obtained from current-voltage (I-V) measurements taken under dark and at room temperature. We observed that the I-Vcharacteristic of the device was affected by the illumination. The device showed a good photodiode property with I-light/I-dark approximate to 10(3) at the lowest illumination level of 25 mW/cm(2). The value of series resistance decreased with increasing the illumination level. The values of open-circuit voltage and short circuit current density were respectively determined as 0.30 V and 78.6 mu A/cm(2) under the illumination level of 104 mW/cm(2). The carrier concentration of the CIGS was found to be 1.59 x 10(15 )cm(-3). The barrier height value of 0.61 eV obtained from capacitance-voltage (C-V) measurement at 1 MHz is lower than that determined from the semilogarithmic I-V plot. (C) 2020 Elsevier B.V. All rights reserved.