Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

MICROELECTRONIC ENGINEERING, vol.98, pp.6-11, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 98
  • Publication Date: 2012
  • Doi Number: 10.1016/j.mee.2012.04.012
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.6-11
  • Keywords: Schottky barrier inhomogeneities, n-GaAs, I-V-T characteristics, CAPACITANCE-VOLTAGE CHARACTERISTICS, I-V CHARACTERISTICS, RICHARDSON CONSTANT, ELECTRON-TRANSPORT, INHOMOGENEITY, INTERFACES, CONTACTS
  • Süleyman Demirel University Affiliated: Yes

Abstract

Temperature-dependent current-voltage (I-V) characteristics of Ni/n-GaAs/In Schottky diodes which are fabricated by magnetron DC sputtering system have been studied. The zero-bias barrier height (BH) versus temperature plot involves two distinct regions. At low temperatures, the zero-bias BH increases with increasing temperature due to lateral distribution of the barrier height. Werner and Guttler's model has been employed to analyze the temperature dependence of barrier height and ideality factor at low temperatures. The standart deviation of the zero-bias BH was calculated as 64 mV and the voltage coefficients of the barrier height were determined as rho(2) = -6.94 x 10(-4) and rho(3) = -5.73 mV. At high temperatures, the zero-bias BH decreases with increasing temperature because of the temperature dependence of semiconductor band gap. The non-linearity has been observed in the Richardson plot due to temperature dependence of the zero-bias BH. Furthermore, the To effect and the temperature dependence of flat band BH of the diodes were investigated. (C) 2012 Elsevier B.V. All rights reserved.