The presence of C/omega-V and G/omega-V peaks profile of Ag/SnO2/n-Si/Au MOS junction for capacitor applications


BENHALİLİBA M., Benouis C. E. , ALDEMİR D. A.

PHYSICA B-CONDENSED MATTER, cilt.572, ss.175-183, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 572
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.physb.2019.07.043
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Sayfa Sayıları: ss.175-183

Özet

The paper describes the behavior of capacitance (C-V) and conductance (G/omega-V) versus voltage characteristics of Ag/SnO2/n-Si/Au metal-oxide-semiconductor (MOS) junction under dark and light condition. In addition, C-V of the junction is measured at room temperature for several frequencies. Ag/SnO2/n-Si/Au MOSjunction is fabricated with both spray pyrolysis at kept substrate temperature of 300 degrees C and thermal evaporation in high vacuum processes for the SnO2 layer and metallic contacts respectively. C-V curves present several peaks when SnO2/Si junction is illuminated with high light intensities. The peaks seem to Gaussian distribution within the reverse-forward bias voltage. Under dark room light and solar simulator conditions, the electrical measurements of junction are achieved presenting different behaviors. The carrier density, calculated from C-V measurements of metal oxide semiconductor junction as a function of light intensity, changes from 0.17 x 10(17) to 0.85 x 10(17) cm(-3) as a result of light intensity.