Published journal articles indexed by SCI, SSCI, and AHCI
The response of high barrier Schottky diodes to light illumination
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32, no.4, pp.4448-4456, 2021 (SCI-Expanded)



Structural, morphological and optical properties of Yb2Cu2O5 thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.21, pp.19457-19462, 2019 (SCI-Expanded)


Articles Published in Other Journals
Ultrasonik Sprey Piroliz Yöntemi ile Üretilen Güneş Soğurucu CH3NH3PbI3-xClx Perovskit Yapısının Optik, Morfolojik ve Yapısal Özelliklerinin İncelenmesi
Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi, vol.15, no.2, pp.253-263, 2020 (Peer-Reviewed Journal)
Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının Yüksek Frekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi
Bitlis Eren Üniversitesi Fen Bilimleri Dergisi, vol.9, no.3, pp.1024-1030, 2020 (Peer-Reviewed Journal)
Ultrasonik Sprey Piroliz ile Üretilen Flor Katkılı Kalay Oksit İnce Filmlerin Yapısal, Morfolojik, Optiksel ve Elektriksel Analizleri
Düzce Üniversitesi Bilim ve Teknoloji Dergisi, vol.7, no.3, pp.2107-2115, 2019 (Peer-Reviewed Journal)
Mo/n-Si Schottky Diyotların Akım-Voltaj ve Kapasite-Voltaj Karakteristiklerinin Analizi
Düzce Üniversitesi Bilim ve Teknoloji Dergisi, vol.7, no.3, pp.2142-2155, 2019 (Peer-Reviewed Journal)
n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri
Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi, vol.13, no.2, pp.18-24, 2018 (Peer-Reviewed Journal)
Refereed Congress / Symposium Publications in Proceedings
The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 October 2019, pp.111
The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height
6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 October 2019, pp.111
The Analysis of Capacitance-Voltage and Conductance voltage Characteristics of Zr/p-Si Schottky Diodes with a Native Oxide Interfacial Layer at High Frequencies
International Natural Science, Engineering and Materials Technology Conference (NEM 2019), 9 - 10 September 2019, pp.87
Uv-Visible study of Yb2Cu2O5 thin film grown by thermal oxidation of Yb/Cu layers
2nd International Congress on Semiconductor materials and Devices, 28 - 30 August 2018, pp.110
Annealing Effects on Current-Voltage Characteristics of Yb/p-Si Schottky Diodes
Turkish Physical Society 34th International Physics Congress, Bodrum/Muğla, Turkey, 5 - 09 September 2018, pp.264
Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes
5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 October 2018, pp.130
The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes, Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, September 6-10 2017, Abstract Book p. 348.
Turkish Physical Society 33rd International Physics Congress, 6 - 10 September 2017, pp.348
The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes
Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Turkey, 6 - 10 September 2017, vol.1, no.1, pp.348
Al/CIGS/Mo SCHOTTKY DİYOTLARININ ELEKTRİKSEL KARAKTERİZASYONU
ADIM FİZİK GÜNLERİ VI, Balıkesir, Turkey, 19 - 21 July 2017, pp.71
Characterization of GaInP Nanofibers Prepared by Electrospinning Process
iccesen 2016, 19 - 24 October 2016
Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Turkey, 17 - 18 April 2014, vol.1, no.1, pp.172
The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes
ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Turkey, 17 - 18 April 2014, vol.1, no.1, pp.162
Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference (ISSTC-2014), 13 - 15 January 2014, pp.99
D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Turkey, 13 - 14 January 2014, pp.98
Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode
Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Turkey, 2 - 05 September 2013, vol.1, no.1, pp.527

Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes, 05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi.
05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Muğla, Turkey, 5 - 08 September 2012, vol.1, no.1, pp.605
Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5 - 08 September 2012, pp.605
The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Turkey, 6 - 09 September 2011, vol.1, no.1, pp.655
The analysis of hydrostatic pressure dependence of Au/n-GaAs/Au-Ge Schottky diode parameters with different methods
Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 September 2011, pp.743
Neutron irradiation effects on I- V characteristics of Au/n-GaAs Schottky diodes
11th Neutron and Ion Dosimetry Symposium (NEUDOS-11), 12 - 16 October 2009, pp.25
Radiation hazards on electrical properties of Schottky diodes
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 August 2009
Electrical characterization of p-type Silicon based on conducting polymer
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 August 2009, pp.448
Analysis of current-voltagecharacteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocompositeinterfacial layer,
Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 August 2009, pp.437
Temperature dependence of electrical parameters of Al/P2ClAn(C2H5COOH)/p-Si/Al structure
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 August 2007, pp.529
ÖZDEMİR A.F., ALDEMİR D. A , KÖKCE A., ALTINDAL S., Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi., Malatya, Turkey, 28 - 31 August 2007, vol.1, no.1, pp.130
Current-Voltage(I-V) and Capacitance-Voltage-Frequency(C-V-f) Characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al Schottky diode
Türk Fizik Derneği 24. Uluslararası Fizik Kongresi, 28 - 31 August 2007, pp.534