Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

The response of high barrier Schottky diodes to light illumination

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021 (Journal Indexed in SCI) identifier identifier

Structural, morphological and optical properties of Yb2Cu2O5 thin films

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.21, pp.19457-19462, 2019 (Journal Indexed in SCI) identifier identifier

Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

BULLETIN OF MATERIALS SCIENCE, vol.40, no.7, pp.1435-1439, 2017 (Journal Indexed in SCI) identifier identifier

Time Dependence of Current-Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, vol.66, pp.576-580, 2011 (Journal Indexed in SCI) identifier identifier

Articles Published in Other Journals

Mo/n-Si Schottky Diyotların Akım-Voltaj ve Kapasite-Voltaj Karakteristiklerinin Analizi

Düzce Üniversitesi Bilim ve Teknoloji Dergisi, vol.7, no.3, pp.2142-2155, 2019 (Refereed Journals of Other Institutions)

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi, vol.13, no.2, pp.18-24, 2018 (Other Refereed National Journals)

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

SAÜ Fen Bilimleri Enstitüsü Dergisi, vol.21, no.6, pp.1286-1292, 2017 (Other Refereed National Journals) Creative Commons License

Refereed Congress / Symposium Publications in Proceedings

The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 October 2019, pp.111

Uv-Visible study of Yb2Cu2O5 thin film grown by thermal oxidation of Yb/Cu layers

2nd International Congress on Semiconductor materials and Devices, 28 - 30 August 2018, pp.110

Annealing Effects on Current-Voltage Characteristics of Yb/p-Si Schottky Diodes

Turkish Physical Society 34th International Physics Congress, Bodrum/Muğla, Turkey, 5 - 09 September 2018, pp.264

Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes

5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 October 2018, pp.130

The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes

Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Turkey, 6 - 10 September 2017, vol.1, no.1, pp.348

Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Turkey, 17 - 18 April 2014, vol.1, no.1, pp.172

The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Turkey, 17 - 18 April 2014, vol.1, no.1, pp.162

D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Turkey, 13 - 14 January 2014, pp.98

Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode

Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Turkey, 2 - 05 September 2013, vol.1, no.1, pp.527

The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods

Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Turkey, 6 - 09 September 2011, vol.1, no.1, pp.655