Prof. Dr. Ahmet Faruk ÖZDEMİR

Yayın Ağı

Makaleler 5

1. A comparison of the effects of different light intensities on the current-voltage characteristics of the Si3N4 interface with various thicknesses grown on the (Au: Ti)/n-GaAs (MS) structure

BUCURGAT M., ÖZDEMİR A. F., ALTINDAL Ş.

Optical Materials , cilt.171, 2026 (SCI-Expanded, Scopus)

2. Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature

Kansız Y., SEVGİLİ Ö., ÖZDEMİR A. F., ALDEMİR D. A., Abdolahpour Salari M., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.700, 2025 (SCI-Expanded, Scopus)

3. Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

Yürekli M., ÖZDEMİR A. F., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.35, sa.6, 2024 (SCI-Expanded, Scopus)

4. Discrepancies in barrier heights obtained from current-voltage (IV) and capacitance-voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

ALTINDAL Ş., ÖZDEMİR A. F., AYDOĞAN Ş., Turut A.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.33, ss.12210-12223, 2022 (SCI-Expanded, Scopus)

5. Effects of measurement temperature and metal thickness on Schottky diode characteristics

Ozdemir A. F., Goksu T., Yildirim N., Turut A.

PHYSICA B-CONDENSED MATTER , cilt.616, 2021 (SCI-Expanded, Scopus)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 44

1. The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALDEMİR D. A.

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)

2. The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height

LAPA H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F.

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)

3. The Analysis of Capacitance-Voltage and Conductance voltage Characteristics of Zr/p-Si Schottky Diodes with a Native Oxide Interfacial Layer at High Frequencies

ALDEMİR D. A., ÖZDEMİR A. F., UÇAR N.

International Natural Science, Engineering and Materials Technology Conference (NEM 2019), 9 - 10 Eylül 2019, ss.87, (Özet Bildiri)

4. Uv-Visible study of Yb2Cu2O5 thin film grown by thermal oxidation of Yb/Cu layers

ALDEMİR D. A., ÖZDEMİR A. F.

2nd International Congress on Semiconductor materials and Devices, 28 - 30 Ağustos 2018, ss.110, (Özet Bildiri)

5. INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF Yb/p-Si SCHOTTKY DIODES

Lapa H. E., ÖZDEMİR A. F., KÖKCE A., UCAR N.

2nd International Congress on Semiconductor Materials&Devices (ICSMD-Ardahan), 28-30 Aug. 2018 Ardaha, Ardahan, Türkiye, 5 - 09 Eylül 2018, cilt.1, ss.163, (Özet Bildiri)

6. Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALDEMİR D. A.

5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018), 4 - 06 Ekim 2018, ss.130, (Özet Bildiri)

7. Radiation shieldıng properties of borided Fe-Ni binary alloys

UÇAR N., EKİNCİ C., ÖZDEMİR A. F., GÜNOĞLU K., ÇALIK A., KARAKAŞ M. S.

4th International Conference on Computational and Experimental Science and Engineering (ICCESEN’2017), Antalya, Türkiye, 4 - 08 Ekim 2017, ss.1-7, (Özet Bildiri)

8. Radiation Shielding Properties Of Borided Fe-Ni Binary Alloys

UÇAR N., EKİNCİ c., ÖZDEMİR A. F., GÜNOĞLU K., ÇALIK A., KARAKAŞ M. S.

4th INTERNATIONAL CONFERENCE ON COMPUTATIONALAND EXPERIMENTAL SCIENCE AND ENGINEERING(ICCESEN-2017), 4 - 08 Ekim 2017, (Özet Bildiri)

9. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes

ALDEMİR D. A., ÖZDEMİR A. F., KÖKCE A.

Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Türkiye, 6 - 10 Eylül 2017, cilt.1, sa.1, ss.348, (Tam Metin Bildiri)

10. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes, Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, September 6-10 2017, Abstract Book p. 348.

ALDEMİR D. A., ÖZDEMİR A. F., KÖKCE A.

Turkish Physical Society 33rd International Physics Congress, 6 - 10 Eylül 2017, ss.348, (Özet Bildiri)

11. On the temperature and voltage dependent negative dielectric constant, electric modulus and ac electrical conductivity in the Au/Ti/Al2O3/n-GaAs (MIS) structures at 1MHz.

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

4th International Conference on Materials Science and Nanotechnology for Next Generation (MSNG-2017), 28 - 30 Haziran 2017, (Özet Bildiri)

12. The Electrical Properties of Au semiconductor polymer P2MeAn n GaAs Au Schottky barrier diodes under Hydrostatic prssure

ÖZDEMİR A. F., Salari M. A., ALTINDAL Ş.

ICCESEN2016, 19 - 24 Ekim 2016, (Özet Bildiri)

13. A compare study on dielectric properties and ac electrical conductivity of Au Ti Al2O3 n GaAs MIS structures with different thicknesses Al2O3 layers as function of the frequency at room temperature

Güçlü Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

ICCESEN-2016, 19 - 24 Ekim 2016, (Özet Bildiri)

14. Temperature dependent dielectric properties of Au Ti Al2O3 n GaAs MIS structure in wide voltage range of 6V

Güçlü Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

Nanongtr2016, 19 - 21 Ekim 2016, (Özet Bildiri)

15. Diffusion kinetics of binary Ni 45 6 Ti shape memory alloys

UÇAR N., Doğan Ş., ÖZDEMİR A. F., KARAKAŞ M. S., ÇALIK A.

3. International Conference on Computational and Experimental Science and Engineering, 19 - 24 Ekim 2016, (Özet Bildiri)

16. The electrical properties of Au semiconductor polymer P2MeAn n GaAs Schottky diodes under hydrostatic pressure

ÖZDEMİR A. F., Saları M., UÇAR N.

3. International connference on computational and experimental science and engineering, 19 - 24 Ekim 2016, (Özet Bildiri)

17. Double Exponential And Double Gaussian Distribution İn Au Ti Al2O3 N Gaas Mıs Schottky Barrier Diodes Sbds İnWide Temperature Range

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

12th International Nanoscience and Nanotechnology Conference, 3 - 05 Haziran 2016, (Özet Bildiri)

18. On the dielectric relaxation electric modulus and ac electrical conductivity usingimpedance spectroscopy method in Au Zn dopped PVA n SiC MPS organic structures

LAPA H. E., AlDharob M. H. A., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

19. A compare study on dielectric properties electric conductivity and electrical modulus of Au n SiC structures with three different thickness interfacial Zndopped PVA layers as function of thickness and frequency at room temperature

LAPA H. E., AlDharob M. H. A., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

20. On the dielectric relaxation, electric modulus and ac electrical conductivity using impedance spectroscopy method in Au Zn PVA n SiC MPS organic structures

Lapa H. E., ALDAHROB M. H. A., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic MaterialTechnologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, cilt.1, sa.1, (Tam Metin Bildiri)

21. A compare study on dielectric properties, electric conductivity and electrical modulus of Au/n-SiC structures with three different thickness interfacial (Zn-dopped PVA) layers as function of thickness and frequency at room temperature, 2 nd

LAPA H. E., Al-Dahrob M. H., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, cilt.1, sa.1, (Tam Metin Bildiri)

22. Effect of Boriding Temperature on the Microhardness Values of Fe Ni Binary Alloys

UÇAR N., ÇALIK A., ÖZDEMİR A. F.

IPCAP2016, 25 - 27 Şubat 2016, (Özet Bildiri)

23. Frequency Dependence of Dielectric Properties and ac Electrical Conductivity of Au Ti Al2O3 n GaAs structures with Different Thicknesses Al2O3 interfacial layer

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

2nd International Nanoscience and Nanotechnolgy for Next Generation (NaNoNG) 2015, 29 - 31 Ekim 2015

24. Frequency and Voltage Dependent Dielectric Properties and ac Electrical Conductivity of Au Ti Al2O3 n GaAs at room temperature

GÜÇLÜ Ç. Ş., ÖZDEMİR A. F., ALTINDAL Ş.

2nd INTERNATIONAL CONFERENCE ON COMPUTATIONAL AND EXPERIMENTAL SCIENCE AND ENGINEERING (ICCESEN-2015), 14 - 19 Ekim 2015

25. On the dielectric relaxation, electric modulus and ac electrical conductivity using impedance spectroscopy method in Au Zn PVA n SiC MPS organic structures

Lapa H. E., ALDAHROB M. H. A., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic MaterialTechnologies (OEMT2016), Çanakkale, Türkiye, 17 Mayıs 2015 - 19 Mayıs 2017, cilt.1, sa.1, ss.154, (Tam Metin Bildiri)

26. The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes

LAPA H. E., KÖKCE A., ALDEMİR D. A., ALTINDAL Ş., ÖZDEMİR A. F.

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.162, (Tam Metin Bildiri)

27. Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode

Kansız Y., KÖKCE A., ALDEMİR D. A., ALTINDAL Ş., ÖZDEMİR A. F.

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.172, (Tam Metin Bildiri)

28. Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

International Semiconductor Science and Technology Conference (ISSTC-2014), 13 - 15 Ocak 2014, ss.99, (Özet Bildiri)

29. D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Türkiye, 13 - 14 Ocak 2014, ss.98, (Özet Bildiri)

30. Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode

LAPA H. E., KÖKCE A., ALDEMİR D. A., Sevgili Ö., ÖZDEMİR A. F.

Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Türkiye, 2 - 05 Eylül 2013, cilt.1, sa.1, ss.527, (Tam Metin Bildiri) Sürdürülebilir Kalkınma

31. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes, 05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi.

KÖKCE A., LAPA H. E., ALDEMİR D. A., ÖZDEMİR A. F.

05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 08 Eylül 2012, cilt.1, sa.1, ss.605, (Tam Metin Bildiri)

32. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes

KÖKCE A., LAPA H. E., ALDEMİR D. A., ÖZDEMİR A. F.

Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5 - 08 Eylül 2012, ss.605, (Özet Bildiri)

33. The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Türkiye, 6 - 09 Eylül 2011, cilt.1, sa.1, ss.655, (Tam Metin Bildiri)

34. The analysis of hydrostatic pressure dependence of Au/n-GaAs/Au-Ge Schottky diode parameters with different methods

ÖZDEMİR A. F., UÇAR N., ALDEMİR D. A., KANSIZ Y., ÖZSOY T., SANCAK M.

Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, 6 - 09 Eylül 2011, ss.743, (Özet Bildiri)

35. Neutron irradiation effects on I- V characteristics of Au/n-GaAs Schottky diodes

AKKURT İ., AKYILDIRIM H., ÖZDEMİR A. F., ALDEMİR D. A.

11th Neutron and Ion Dosimetry Symposium (NEUDOS-11), 12 - 16 Ekim 2009, ss.25, (Özet Bildiri)

36. Analysis of current-voltagecharacteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocompositeinterfacial layer,

ALDEMİR D. A., ESEN M., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, ss.437, (Özet Bildiri)

37. Electrical characterization of p-type Silicon based on conducting polymer

ÖZDEMİR A. F., GÜRKAN AYDIN S., ALDEMİR D. A., ŞEN GÜRSOY S.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 Ağustos 2009, ss.448, (Özet Bildiri)

38. Radiation hazards on electrical properties of Schottky diodes

AKYILDIRIM H., ALDEMİR D. A., GÜNOĞLU K., ÖZDEMİR A. F., AKKURT İ.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, (Özet Bildiri)

39. D. A. ALDEMİR , M. ESEN , A. KÖKCE, and A.F. ÖZDEMİR , Analysis of current-voltage characteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

ALDEMIR D. A., ESEN M., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009,, Muğla, Türkiye, 24 - 27 Ağustos 2009, cilt.1, sa.1, ss.437, (Tam Metin Bildiri)