Prof. Dr. Ali KÖKCE

Makaleler 31

1. The response of high barrier Schottky diodes to light illumination

Lapa H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , cilt.32, sa.4, ss.4448-4456, 2021 (SCI-Expanded, Scopus) Sürdürülebilir Kalkınma

2. Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method

Lapa H. E., KÖKCE A., ÖZDEMİR A. F., ALTINDAL Ş.

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS , cilt.234, sa.3, ss.505-516, 2020 (SCI-Expanded, Scopus)

3. The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

ALDEMİR D. A., ALDEMİR R., KÖKCE A., Duman S., ÖZDEMİR A. F.

SILICON , cilt.11, sa.6, ss.2647-2657, 2019 (SCI-Expanded, Scopus)

4. Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi

Lapa H. E., KÖKCE A., ÖZDEMİR A. F.

IĞDIR ÜNİVERSİTESİ FEN BİLİMLERİ ENSTİTÜSÜ DERGİSİ , cilt.9, sa.1, ss.1385-1394, 2019 (TRDizin)

5. Investigation of Electrical Characteristics of Yb/p-Si Schottky Diodes

LAPA H. E., KÖKCE A., ÖZDEMİR A. F.

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi , ss.1385-1394, 2019 (TRDizin)

6. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

GUCLU C. S., ÖZDEMİR A. F., Karabulut A., KÖKCE A., Altindal S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.89, ss.26-31, 2019 (SCI-Expanded, Scopus)

7. The investigation of current-conduction mechanisms (CCMs) in Au/(0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

Al-Dharob M. H., Lapa H. E., KÖKCE A., ÖZDEMİR A. F., ALDEMİR D. A., Altindal S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.85, ss.98-105, 2018 (SCI-Expanded, Scopus)

8. Detection and Identification of Vehicles Based on Their Spark-Free Unintended Electromagnetic Emissions

GÖKSU H., WUNSCH D. C., DONG X., KÖKCE A., BEETNER D. G.

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY , cilt.60, sa.5, ss.1594-1597, 2018 (SCI-Expanded, Scopus)

9. A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Lapa H. E., KÖKCE A., ÖZDEMİR A. F., Uslu I., ALTINDAL Ş.

BULLETIN OF MATERIALS SCIENCE , cilt.41, sa.3, 2018 (SCI-Expanded, Scopus)

10. The Effect of Modified PVAInterfacial Layer Doped by Zn Nanoparticles on the Electrical Parameters of Au/N-4H SiC (MS) Structures

Al-Dahrob M. H., KÖKCE A., LAPA H. E., ÖZDEMİR A. F., ALTINDAL Ş.

Polymer Sciences , cilt.4, ss.1-9, 2018 (Hakemli Dergi)

11. The Effect of Modified PVA Interfacial Layer Doped by Zn Nanoparticles on the Electrical Parameters of Au/N-4H Sic (MS) Structures

Al-Dahrob M. H., KÖKCE A., Lapa H. E., ÖZDEMİR A. F., ALTINDAL Ş.

Polymer Sciences , cilt.4, sa.1, ss.1-9, 2018 (Hakemli Dergi)

12. Temperature effects on the electrical characteristics of Al/PTh-SiO2/p-Si structure

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

BULLETIN OF MATERIALS SCIENCE , cilt.40, sa.7, ss.1435-1439, 2017 (SCI-Expanded, Scopus)

13. Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

SAÜ Fen Bilimleri Enstitüsü Dergisi , cilt.21, sa.6, ss.1286-1292, 2017 (TRDizin)

14. Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room

LAPA H. E., KÖKCE A., AL-DHAROB M., Orak I., ÖZDEMİR A. F., Altindal S.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS , cilt.80, sa.1, 2017 (SCI-Expanded, Scopus)

15. Aharonov-Bohm effect in Kane-type semiconductor quantum wire

CAKMAKTEPE S., BABAYEV A., Kokce A.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.27, sa.4, ss.397-404, 2005 (SCI-Expanded, Scopus)

16. Solution of the inverse electromagnetic problem of spontaneous potential (SP) by very fast simulated reannealing (VFSR)

GOKSU H., KAYA M., Kokce A.

ADVANCES IN NATURAL COMPUTATION, PT 2, PROCEEDINGS , cilt.3611, ss.618-621, 2005 (SCI-Expanded)

17. A quantum wavepacket study of three-dimensional Ne-H-2(+) scattering

GOGTAS F., OTURAK H., BULUT N., AKPINAR S., Kokce A.

MOLECULAR PHYSICS , cilt.101, sa.12, ss.1901-1909, 2003 (SCI-Expanded, Scopus)

18. g-factor of carriers in Kane-type semiconductor wire

CAKMAK S., BABAYEV A., ARTUNC E., Kokce A., CAKMAKTEPE S.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , cilt.18, sa.4, ss.365-371, 2003 (SCI-Expanded, Scopus)

19. Nuclear matrix elements of double beta decay in deformed nuclei.

KÖKCE A., Selam C., Küçükbursa A., Bircan H., Aygör H. A., Babacan T., et al.

Turkish Journal of Physics , cilt.27, sa.3, ss.187-193, 2003 (SCI-Expanded, Scopus, TRDizin)

20. The interface state energy distribution from capacitance-frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air

OZDEMIR A., TURUT A., Kokce A.

THIN SOLID FILMS , cilt.425, ss.210-215, 2003 (SCI-Expanded, Scopus)

21. Transfer Matris Metodunun Bilineer ve Bikuadratik Değişme Etkileşmeli Hamiltoniyene Sahip Spin-1 İsing Modeline Uygulanması

KAPLAN A., KÖKCE A.

S.DU. Fen Bilimleri Dergisi , cilt.6, sa.2, ss.122-129, 2002 (Hakemli Dergi)

22. Time-dependent quantum study of three-dimensional inelastic scattering of I-H-2

GOGTAS F., BULUT N., OTURAK H., Kokce A.

JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM , cilt.584, ss.149-157, 2002 (SCI-Expanded, Scopus)

23. Au n GaAs Scottky Engelli Diyotlarda Oksitlenme ve Yaşlanmanın I V ve C V Karakteristiklerine Etkileri

ÖZDEMİR A. F., KÖKCE A., TÜRÜT A.

S.D.Ü. Fen Bilimleri Enstitüsü Dergisi , cilt.8, sa.2, ss.4-10, 2002 (Hakemli Dergi)

24. Origin and Frequency Dependence of the Anomalous Peak in Forward Capacitance-Voltage Characterictics of Schottky Diodes

TÜRÜT A., SAĞLAM M., BATI B., KÖKCE A.

Turkish Journal of Physics , cilt.19, ss.0-611, 1995 (SCI-Expanded, Scopus, TRDizin)

25. The Calculation of Martensite Habit Plane by using Elastic Strain Energy.

KÖKCE A., Doğan A., Ceylan M.

NML Technical Journal, 33 (1-2). pp. 3-8. , cilt.33, ss.3-8, 1991 (Hakemli Dergi)

26. **Low Temperature X-Ray Diffraction Topography Study on Hematite (*-Fe2O3) Single Crystal**

KÖKCE A., Doğan A.

Ondokuz Mayıs Univ. Fen Dergisi, 3, 44. , cilt.3, sa.1, ss.44-47, 1991 (Hakemli Dergi)

27. The Calculation of Stacking Fault Energies of Commercial Stainless Stell,

Doğan A., KÖKCE A.

The Journal of Fırat Univ. , cilt.4, ss.1-8, 1989 (Hakemli Dergi)

28. Magnetic Domains in Hematite Fe2O3 Single Crystal

KÖKCE A.

TURKISH JOURNAL OF PHYSICS , cilt.13, sa.1, ss.251-256, 1989 (ESCI, Scopus, TRDizin)

29. X-Ray Topography Studies of Dislocations in InSb Single Crystal,

KÖKCE A., Ceylan M.

The Journal of Fırat Univ., 2(1), 85-92. , cilt.2, sa.1, ss.85-92, 1987 (Hakemli Dergi)

30. A Model For Martensite Nucleation in Some Fe-Base Alloys

Doğan A., KÖKCE A., Durlu T. N.

Communications, Fac. Sci. Univ. Ank., Serie A2, , cilt.A2, sa.32, ss.13-29, 1983 (Hakemli Dergi)

31. A Model For Martensite Growth in Fe-Ni Alloys, Communications, Fac. Sci. Univ. Ank., Serie A2, 32, 31-46.

KÖKCE A., Doğan A., Durlu T. N.

Communications, Fac. Sci. Univ. Ank , cilt.Serie A2,, sa.32, ss.31-46, 1983 (Hakemli Dergi)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 36

1. The Illumination Effects on nearly Ideal Yb/p-Si Schottky Diodes with a High Zero-Bias Barrier Height

LAPA H. E., KÖKCE A., ALDEMİR D. A., ÖZDEMİR A. F.

6th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2019), 16 - 18 Ekim 2019, ss.111, (Özet Bildiri)

2. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes, Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, September 6-10 2017, Abstract Book p. 348.

ALDEMİR D. A., ÖZDEMİR A. F., KÖKCE A.

Turkish Physical Society 33rd International Physics Congress, 6 - 10 Eylül 2017, ss.348, (Özet Bildiri)

3. The current-voltage and capacitance-voltage characteristics of Gd/p-Si Schottky diodes

ALDEMİR D. A., ÖZDEMİR A. F., KÖKCE A.

Turkish Physical Society 33rd International Physics Congress, Bodrum/TURKEY, Muğla, Türkiye, 6 - 10 Eylül 2017, cilt.1, sa.1, ss.348, (Tam Metin Bildiri)

4. A Comparative Study on Electrical Characteristics of Au/n-SiC structure, with and Without Zn-Doped PVA Interfacial Layer at Room Temperature

ALDAHROB M. H. A., KÖKCE A., ALTINDAL Ş., Lapa H. E.

ICNN 2016 : 18th International Conference on Nanoscience and Nanotechnology, Toronto, Kanada, 13 - 14 Haziran 2016, cilt.10, sa.6, ss.1238, (Tam Metin Bildiri)

5. A compare study on dielectric properties electric conductivity and electrical modulus of Au n SiC structures with three different thickness interfacial Zndopped PVA layers as function of thickness and frequency at room temperature

LAPA H. E., AlDharob M. H. A., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

6. On the dielectric relaxation electric modulus and ac electrical conductivity usingimpedance spectroscopy method in Au Zn dopped PVA n SiC MPS organic structures

LAPA H. E., AlDharob M. H. A., KÖKCE A., ÖZDEMİR A. F., USLU İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), 17 - 19 Mayıs 2016, (Özet Bildiri)

7. On the dielectric relaxation, electric modulus and ac electrical conductivity using impedance spectroscopy method in Au Zn PVA n SiC MPS organic structures

Lapa H. E., ALDAHROB M. H. A., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic MaterialTechnologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, cilt.1, sa.1, (Tam Metin Bildiri)

8. A compare study on dielectric properties, electric conductivity and electrical modulus of Au/n-SiC structures with three different thickness interfacial (Zn-dopped PVA) layers as function of thickness and frequency at room temperature, 2 nd

LAPA H. E., Al-Dahrob M. H., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Türkiye, 17 - 19 Mayıs 2016, cilt.1, sa.1, (Tam Metin Bildiri)

9. Interfacial Layer Thickness Effect On the Performance of Au Zn Dopped PVA n 4H SiC MPS Structures At Room Temparature IPCAP2016 International Physics Conference At the Anatolian Peak 25 27 February 2016 Erzurum Turkey page 214

LAPA H. E., KÖKCE A., ORAK İ., ALTINDAL Ş.

IPCAP2016 International Physics Conference At the Anatolian Peak, 25-27 February 2016 Erzurum, Turkey., Erzurum, Türkiye, 25 - 27 Şubat 2016

10. Interfacial Layer Thickness Effect On the Performance of Au/Zn-Dopped PVA/n-4H-SiC (MPS) Structures At Room Temparature

Lapa H. E., KÖKCE A., Orak İ., Altındal Ş.

IPCAP2016 International Physics Conference At the Anatolian Peak,, Erzurum, Türkiye, 25 - 27 Şubat 2016, ss.214, (Tam Metin Bildiri)

11. The Investigation of Electrical Characteristics in the Au/n-4H-SiC Structures with Different Thickness of Zn-Dopped PVA Interlayer in the Wide Frequency Range

Lapa H. E., KÖKCE A., Orak İ., Altındal Ş.

IPCAP2016 International Physics Conference At the Anatolian Peak, Erzurum, Türkiye, 25 - 27 Şubat 2016, ss.215, (Özet Bildiri)

12. On the dielectric relaxation, electric modulus and ac electrical conductivity using impedance spectroscopy method in Au Zn PVA n SiC MPS organic structures

Lapa H. E., ALDAHROB M. H. A., KÖKCE A., ÖZDEMİR A. F., Uslu İ., ALTINDAL Ş.

2 nd International Conference on Organic Electronic MaterialTechnologies (OEMT2016), Çanakkale, Türkiye, 17 Mayıs 2015 - 19 Mayıs 2017, cilt.1, sa.1, ss.154, (Tam Metin Bildiri)

13. The Effects of Illumination on Capacitance-Voltage Characteristics of Au/Conducting Polymer (P3DMTFT)/n-GaAs Schottky Diodes

LAPA H. E., KÖKCE A., ALDEMİR D. A., ALTINDAL Ş., ÖZDEMİR A. F.

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.162, (Tam Metin Bildiri)

14. Investigation of Capacitance-Voltage Characteristics of Au/Conductive Ploymer (P3DMTFT)/n-GaAs Schottky Diode

Kansız Y., KÖKCE A., ALDEMİR D. A., ALTINDAL Ş., ÖZDEMİR A. F.

ADIM FİZİK GÜNLERİ III, Süleyman Demirel Üniversitesi, Fen-Edebiyat Fakültesi Fizik Bölümü, Isparta, Türkiye, 17 - 18 Nisan 2014, cilt.1, sa.1, ss.172, (Tam Metin Bildiri)

15. Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

International Semiconductor Science and Technology Conference (ISSTC-2014), 13 - 15 Ocak 2014, ss.99, (Özet Bildiri)

16. D. A. Aldemir, A. Kökce, A. F. Özdemir,Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

International Semiconductor Science and Technology Conference, Istanbul, Turkey,January 13-15 2014, ISSTC-2014, İstanbul, Türkiye, 13 - 14 Ocak 2014, ss.98, (Özet Bildiri)

17. Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode

LAPA H. E., KÖKCE A., ALDEMİR D. A., Sevgili Ö., ÖZDEMİR A. F.

Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, Absract Book p. 527., İstanbul, Türkiye, 2 - 05 Eylül 2013, cilt.1, sa.1, ss.527, (Tam Metin Bildiri) Sürdürülebilir Kalkınma

18. H. E. LAPA, A. KÖKCE, D. A. ALDEMİR, Ö. SEVGİLİ and A. F. ÖZDEMİR, Analysis of electrical and photovoltaic characteristics of Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diode, 02 -05 Eylül 2013,

KÖKCE A.

Türk Fizik Derneği 30. Uluslararası Fizik Kongresi, İstanbul/Türkiye, İstanbul, Türkiye, 2 - 05 Eylül 2013, cilt.1, sa.1, ss.527, (Özet Bildiri) Sürdürülebilir Kalkınma

19. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes, 05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi.

KÖKCE A., LAPA H. E., ALDEMİR D. A., ÖZDEMİR A. F.

05 -08 Eylül 2012, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 08 Eylül 2012, cilt.1, sa.1, ss.605, (Tam Metin Bildiri)

20. Analysis of current-voltage (I-V) characteristics in Au/ poly (3-subsitutethiophene) (P3DMTFT) / n-GaAs Schottky diodes

KÖKCE A., LAPA H. E., ALDEMİR D. A., ÖZDEMİR A. F.

Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, 5 - 08 Eylül 2012, ss.605, (Özet Bildiri)

21. The comparison of important contact parameters of Ni/n-GaAs/In Schottky diodes obtained by different methods

ALDEMİR D. A., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 28. Uluslararası Fizik Kongresi, Bodrum, Muğla, Türkiye, 6 - 09 Eylül 2011, cilt.1, sa.1, ss.655, (Tam Metin Bildiri)

22. Analysis of current-voltagecharacteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocompositeinterfacial layer,

ALDEMİR D. A., ESEN M., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009, ss.437, (Özet Bildiri)

23. D. A. ALDEMİR , M. ESEN , A. KÖKCE, and A.F. ÖZDEMİR , Analysis of current-voltage characteristic in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

ALDEMIR D. A., ESEN M., KÖKCE A., ÖZDEMİR A. F.

Türk Fizik Derneği 26. Uluslararası Fizik Kongresi, 24 - 27 Ağustos 2009,, Muğla, Türkiye, 24 - 27 Ağustos 2009, cilt.1, sa.1, ss.437, (Tam Metin Bildiri)