Particle penetration in Kane type semiconductor quantum dots


HASHIMZADE F. M. , Babayev A. , Tez S.

EUROPEAN PHYSICAL JOURNAL B, cilt.72, ss.127-131, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 72 Konu: 1
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1140/epjb/e2009-00326-9
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
  • Sayfa Sayıları: ss.127-131

Özet

In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.