Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure


CANKAYA G., Ucar N., TURUT A.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.87, no.10, pp.1171-1176, 2000 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 87 Issue: 10
  • Publication Date: 2000
  • Doi Number: 10.1080/002072100415611
  • Journal Name: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1171-1176
  • Süleyman Demirel University Affiliated: Yes

Abstract

In Au/n-GaAs Schottky diodes, a remarkable decrease in the depletion layer capacitance was observed by application of hydrostatic pressure. The capacitance decrease induced by the hydrostatic pressure is attributed to the change of ionized additional donor-like defect centres. Since the capacitance decrease is due to hydrostatic pressure, we suggest an application as a pressure-sensitive capacitor.