Frequency dependence of capacitance of Au/n-GaAs Schottky diode under hydrostatic pressure
INTERNATIONAL JOURNAL OF ELECTRONICS, vol.89, no.10, pp.745-752, 2002 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 89 Issue: 10
- Publication Date: 2002
- Doi Number: 10.1080/0020721031000093138
- Journal Name: INTERNATIONAL JOURNAL OF ELECTRONICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.745-752
- Süleyman Demirel University Affiliated: Yes
Abstract
Au/n-GaAs Schottky barrier diodes have been fabricated and the characteristics of capacitance versus frequency under hydrostatic pressure and forward bias were investigated. Although the capacitance is independent of frequency over 50 kHz, it was found that the capacitance strongly depends on forward bias and hydrostatic pressure due to a change of ionized defect concentration in the low-frequency region. These pressure-dependent studies may be of importance for the application of this material as a pressure-sensitive capacitor.