Frequency dependence of capacitance of Au/n-GaAs Schottky diode under hydrostatic pressure


CANKAYA G., Ucar N.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.89, ss.745-752, 2002 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 89 Konu: 10
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1080/0020721031000093138
  • Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Sayfa Sayıları: ss.745-752

Özet

Au/n-GaAs Schottky barrier diodes have been fabricated and the characteristics of capacitance versus frequency under hydrostatic pressure and forward bias were investigated. Although the capacitance is independent of frequency over 50 kHz, it was found that the capacitance strongly depends on forward bias and hydrostatic pressure due to a change of ionized defect concentration in the low-frequency region. These pressure-dependent studies may be of importance for the application of this material as a pressure-sensitive capacitor.