Ag/BST/p-Si MFS Device Production and Characterization


Jasim B. M. , KALELİ M.

ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING, vol.47, no.6, pp.7797-7806, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 47 Issue: 6
  • Publication Date: 2022
  • Doi Number: 10.1007/s13369-022-06676-x
  • Journal Name: ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Metadex, Pollution Abstracts, zbMATH, Civil Engineering Abstracts
  • Page Numbers: pp.7797-7806
  • Keywords: Complementary-metal-oxide-semiconductor (CMOS), Barium-strontium-titanate (BST), Schottky barrier, Silver (Ag) electrode, Maxwell-Wagner polarization effect, BARIUM STRONTIUM-TITANATE, THIN-FILMS, CAPACITANCE-VOLTAGE, GRAIN-SIZE, DEPOSITION
  • Süleyman Demirel University Affiliated: Yes

Abstract

The Ag/BST/p-Si/Al device in the complementary-metal-oxide-semiconductor (CMOS) structure has been produced and characterized. The influence of the BST deposition parameters as well as the crystallinity and the surface morphology effect on the electrical properties of the device has been investigated. The effect of Ag metal contact as an electrode on the electrical properties of the device was also discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the MIS device have been studied. Frequency (f) and DC bias voltage (V) dependence of the dielectric material and electrical properties of Ag/BST/p-Si/Al have been investigated in the kilohertz frequency range (75-900 kHz) and bias range from - 6 V to + 6 V. Dielectric constant (epsilon MODIFIER LETTER PRIME), dielectric loss (epsilon"), loss tangent (tan delta) and conductance (G) behavior of the MIS device have been discussed in detail. The device showed attracted rectification behavior with high capacitance achievement. Also, the device was frequency independent in kilohertz frequency level without dispersion at room temperature. This device structure which has superior electrical properties can be an attractive candidate for the ferroelectric dynamic random access memories (FDRAM) and radio frequency (RF) applications.