RF-plasma vapor deposition of siloxane on paper. Part 2: Chemical evolution of paper surface


Sahin H. T.

APPLIED SURFACE SCIENCE, cilt.265, ss.564-569, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 265
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.apsusc.2012.11.046
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayıları: ss.564-569

Özet

Survey and high-resolution (HR) XPS studies indicate that OMCTSO plasma treatment created a new silicon containing functional groups and changed the hydroxyl content on the surface of paper. Four intense survey XPS spectrum peaks were observed for the OMCTSO plasma treated paper. They were the Si-2p at 100 eV, Si-2s at 160 eV, C-1s at 285 eV, and O-1s at 525 eV for the plasma modified surface. It was realized that the macromolecular chain-breaking mechanisms and plasma-induced etching processes control the number and the availability of OH-functionalities during OMCTSO plasma exposure on paper. The reaction, initiated by these species, depends mainly on the nature of chemicals in the plasma as well as on the energy level of the plasma and the nature of the surface effects in the modification of the paper. The ATR-FTIR spectrum of paper treated with OMCTSO plasma has characteristic absorption bands attributed to the Si-O and Si-O Si formations on the surface. (C) 2012 Elsevier B.V. All rights reserved.