Effect of indentation on I-V characteristics of Au/n-GaAs Schottky barrier diodes

ÖZDEMİR A. F. , Calik A. , Cankaya G., SAHIN O., UÇAR N.

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, cilt.63, ss.199-202, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 63
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1515/zna-2008-3-414
  • Dergi Adı: ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
  • Sayfa Sayıları: ss.199-202

Özet

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (phi(b)) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Ob with increasing indentation weight, while contacts showed a nonideal diode behaviour.