Effect of indentation on I-V characteristics of Au/n-GaAs Schottky barrier diodes

ÖZDEMİR A. F. , Calik A., Cankaya G., SAHIN O., UÇAR N.

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, vol.63, pp.199-202, 2008 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 63
  • Publication Date: 2008
  • Doi Number: 10.1515/zna-2008-3-414
  • Journal Name: ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.199-202

Abstract

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (phi(b)) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Ob with increasing indentation weight, while contacts showed a nonideal diode behaviour.