Particle penetration with delta potentials in Kane-type semiconductors Туннелювання електронів через дельта-потенціальні бар'єри у напівпровідниках типу Кейна
Fizika Nizkikh Temperatur, cilt.52, sa.3, ss.346-351, 2026 (Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 52 Sayı: 3
- Basım Tarihi: 2026
- Dergi Adı: Fizika Nizkikh Temperatur
- Derginin Tarandığı İndeksler: Scopus
- Sayfa Sayıları: ss.346-351
- Anahtar Kelimeler: Kane-type semiconductors, quantum dot, resonant tunneling
- Süleyman Demirel Üniversitesi Adresli: Evet
Özet
We have investigated the tunneling of electrons through a spherical, narrow, penetrable delta-type potential barrier in A3B5-type semiconductors. Utilizing the Kane equations, along with the continuity conditions of the wave functions and the flux discontinuity at the interface of the spherical dots, we have analytically calculated the tunneling amplitude for semiconductor quantum dots. It has been demonstrated that the dependence of the transmission coefficient on the electron energy has a strongly resonant nature.