Effect of sulphurization and Al doping on Cd0.25Zn0.75S thin films deposited by ultrasonic spray pyrolysis technique

KALELİ M.

OPTIK, vol.207, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 207
  • Publication Date: 2020
  • Doi Number: 10.1016/j.ijleo.2019.163781
  • Journal Name: OPTIK
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC
  • Keywords: Cd0.25Zn0.75S, Ultrasonic spray pyrolysis, Aluminum doping, Band gap engineering, OPTICAL-PROPERTIES, SOLAR-CELLS, CDZNS, ZNO, PHOTOLUMINESCENCE, CDS
  • Süleyman Demirel University Affiliated: Yes

Abstract

The Pure And Al-Doped Cd0.25Zn0.75S Thin Films Have Been Firstly Fabricated By Ultrasonic Spray Pyrolysis (Usp) Technique And Then These Samples Were Subjected To Sulfurization At 500 degrees C In Nitrogen Atmosphere. The Structural, Electro-Optical, Morphological Properties, And The Elemental Composition Of The As-Grown And Sulphurated Samples Have Been Determined By Applying X-Ray Diffraction (Xrd), Ultraviolet-Visible Spectroscopy (Uv-vis), Scanning Electron Microscopy (Sem), And Energy Dispersive Spectroscopy (Eds) Measurements, Respectively. Xrd Measurements Have Revealed That The Sulphurated Samples Have Hexagonal Lattice Structure While The As-Grown Samples Have Cubic Lattice Structure. Uv-vis Measurements Have Shown That The Lowest Band Gap Energy Of 2.68 Ev Was Observed For Sulphurated Al-Doped Samples As The Sulphurated Un-Doped Samples Had The Highest Band Gap Energy Of 3.96 Ev. Additionally, Cross-Sectional Sem Images Of The Samples Have Proved That Usp Is A Controllable Deposition Technique For The Fabrication Of The Pure And Al Doped CCd0.25Zn0.75S Thin Films With 10 Nm Thickness Resolution.