Effect of sulphurization and Al doping on Cd0.25Zn0.75S thin films deposited by ultrasonic spray pyrolysis technique


KALELİ M.

OPTIK, cilt.207, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

Özet

The Pure And Al-Doped Cd0.25Zn0.75S Thin Films Have Been Firstly Fabricated By Ultrasonic Spray Pyrolysis (Usp) Technique And Then These Samples Were Subjected To Sulfurization At 500 degrees C In Nitrogen Atmosphere. The Structural, Electro-Optical, Morphological Properties, And The Elemental Composition Of The As-Grown And Sulphurated Samples Have Been Determined By Applying X-Ray Diffraction (Xrd), Ultraviolet-Visible Spectroscopy (Uv-vis), Scanning Electron Microscopy (Sem), And Energy Dispersive Spectroscopy (Eds) Measurements, Respectively. Xrd Measurements Have Revealed That The Sulphurated Samples Have Hexagonal Lattice Structure While The As-Grown Samples Have Cubic Lattice Structure. Uv-vis Measurements Have Shown That The Lowest Band Gap Energy Of 2.68 Ev Was Observed For Sulphurated Al-Doped Samples As The Sulphurated Un-Doped Samples Had The Highest Band Gap Energy Of 3.96 Ev. Additionally, Cross-Sectional Sem Images Of The Samples Have Proved That Usp Is A Controllable Deposition Technique For The Fabrication Of The Pure And Al Doped CCd0.25Zn0.75S Thin Films With 10 Nm Thickness Resolution.