Forward bias capacitance-voltage characteristics and interface state density of Au/n-GaAs Schottky diodes under hydrostatic pressure


CANKAYA G., Ucar N.

PHYSICA SCRIPTA, vol.65, no.5, pp.454-458, 2002 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 5
  • Publication Date: 2002
  • Doi Number: 10.1238/physica.regular.065a00454
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.454-458

Abstract

Forward bias capacitance-voltage characteristics and interface state density of Au/n-GaAs Schottky diode were investigated by capacitance technique under hydrostatic pressure. It is shown that the capacitance-voltage characteristics are influenced due to the change of ionised additional donor-like defect centres. The interface state density decreases with the increase of energy from the edge of the valence band. In addition. it has been found that the hydrostatic pressure seriously affects the interface state density.