Hartman effect in a Kane-type semiconductor quantum ring


Cakmaktepe S.

PHYSICA SCRIPTA, vol.75, no.2, pp.142-146, 2007 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 75 Issue: 2
  • Publication Date: 2007
  • Doi Number: 10.1088/0031-8949/75/2/004
  • Title of Journal : PHYSICA SCRIPTA
  • Page Numbers: pp.142-146

Abstract

The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov - Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux.