Al/P3DMTPT/p-Si/AI structure has been obtained by the evaporation of the polymer P3DMTPT on the front surface of a p-type silicon substrate. The current-voltage characteristic (I-V) of the structure has been measured under hydrostatic pressure at room temperature. Al/P3DMTPT/p-Si/AI structure demonstrates clearly rectifying behaviour by I-V curves under hydrostatic pressure. The barrier height and ideality factor from I-V characteristics varies from 3.8 to 2.03 and 0.63 to 0.72 eV at 0.0-6.0 kbar pressure, respectively. The barrier height for Al/P3DMTPT/p-Si/Al Schottky diodes has a linear pressure coefficient of alpha = 16.3 meV/kbar (=163 meV/GPa). The energy distribution of the interface state density determined from I-V characteristics ranges from 1.46 x 10(12) cm(-2) eV(-1) in (0.58 - E-v) eV to 2.14 x 10(12) cm(-2) eV(-1) in (0.44 - E-v) eV and 4.84 x 10(11) cm(-2) eV(-1) in (0.64 - E-v) eV to 1.27 x 10(12) cm(-2) eV(-1) in (0.44 - E-v) eV for 0 and 6 kbar, respectively. The interface state density decreases with increasing hydrostatic pressure due to the rectifying properties of the diode. (C) 2010 Elsevier Ltd. All rights reserved.