Energy spectrum of carriers in a Kane-type semiconductor anti-wire
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, vol.60, pp.593-598, 2005 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 60
- Publication Date: 2005
- Doi Number: 10.1515/zna-2005-8-906
- Journal Name: ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.593-598
- Süleyman Demirel University Affiliated: Yes
Abstract
The electronic states of a Kane-type semiconductor anti-wire with and without a magnetic field are theoretically investigated. The eigenvalues and eigenstates of Kane's Hamiltonian are obtained. The calculations are performed for a hard-wall confinement potential, and electronic states are obtained as functions of the magnetic field applied along the cylinder axis. The size dependences of the effective g-value in InSb for electrons and light holes are calculated. The effective g-values of the electrons and light holes decreased with decreasing anti-wire radius.