Energy spectrum of carriers in a Kane-type semiconductor anti-wire


Cakmak S.

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, vol.60, pp.593-598, 2005 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 60
  • Publication Date: 2005
  • Doi Number: 10.1515/zna-2005-8-906
  • Journal Name: ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.593-598

Abstract

The electronic states of a Kane-type semiconductor anti-wire with and without a magnetic field are theoretically investigated. The eigenvalues and eigenstates of Kane's Hamiltonian are obtained. The calculations are performed for a hard-wall confinement potential, and electronic states are obtained as functions of the magnetic field applied along the cylinder axis. The size dependences of the effective g-value in InSb for electrons and light holes are calculated. The effective g-values of the electrons and light holes decreased with decreasing anti-wire radius.