THIOPHENE DEPOSITION ON PAPER SURFACE BY PULSED RF-PLASMA


Sahin H. T.

JOURNAL OF WOOD CHEMISTRY AND TECHNOLOGY, vol.35, no.5, pp.355-364, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 5
  • Publication Date: 2015
  • Doi Number: 10.1080/02773813.2014.981279
  • Title of Journal : JOURNAL OF WOOD CHEMISTRY AND TECHNOLOGY
  • Page Numbers: pp.355-364

Abstract

The plasma duty cycle, in addition to power and exposure time, affects the surface atomic composition of thiophene plasma-treated paper. The elemental carbon and sulfur concentration increased from 56.7% to 78.6% and 0% to 13.4%, respectively, while oxygen decreased from 43.3% to 8.0% with the plasma treatment. Relatively large variations in the deposited film-like layer composition could be realized by changing plasma external parameters. The high-resolution (HR) C1s spectra of the thiophene plasma-treated paper clearly exhibit plasma-induced rearrangements and new sulfur functionalities on the paper surface. After a five-hour ex situ doping of thiophene plasma-treated papers with iodine, conductivity ranging from delta = 4.2E-2 to 4.1 S/cm was obtained. The low relative F/C atomic ratio after TFAA derivatization indicates that no hydroxyl groups were present on the paper surface after the thiophene plasma treatment.