Quasi-bound states in Kane type semiconductor quantum dots


Babanli A. M. , Artunc E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.16, ss.481-485, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 16
  • Basım Tarihi: 2014
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Sayfa Sayıları: ss.481-485

Özet

In the present study, it is considered that a A(3)B(5) type spherical semiconductor quantum dot surrounded by a very thin insulating spherical layer is placed in an another A(3)B(5) type semiconductor region. It is assumed that the delta -type potential barrier for the very thin insulating spherical layer has a radius of a. By using Kane Hamiltonian, it is investigated the scattering resonances of electrons which are scattered from the boundary of the semiconductor dot. By using the continuity conditions for the wave functions and flux discontinuous at the boundary of the semiconductor quantum dot, we have analytically calculated the phase shift and the partial cross section for the scattering of electrons. It has been shown that the quasi-bound states appear as peaks in the cross section.