Effect of hydrostatic pressure on series resistance of Au/n-GaAs Schottky diodes
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.41, sa.1, ss.36-39, 2003 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 41 Sayı: 1
- Basım Tarihi: 2003
- Dergi Adı: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.36-39
- Süleyman Demirel Üniversitesi Adresli: Evet
Özet
Au/n-GaAs Schottky barrier diodes have been fabricated. The series resistance has been measured as a function of hydrostatic pressure using the current-voltage (I-V) technique. It has been found that the series resistance increases with increasing hydrostatic pressure.