Effect of hydrostatic pressure on series resistance of Au/n-GaAs Schottky diodes
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, vol.41, no.1, pp.36-39, 2003 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 41 Issue: 1
- Publication Date: 2003
- Journal Name: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.36-39
- Süleyman Demirel University Affiliated: Yes
Abstract
Au/n-GaAs Schottky barrier diodes have been fabricated. The series resistance has been measured as a function of hydrostatic pressure using the current-voltage (I-V) technique. It has been found that the series resistance increases with increasing hydrostatic pressure.