Effect of hydrostatic pressure on series resistance of Au/n-GaAs Schottky diodes

CANKAYA G., Ucar N.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, vol.41, no.1, pp.36-39, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 1
  • Publication Date: 2003
  • Journal Name: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.36-39
  • Süleyman Demirel University Affiliated: Yes

Abstract

Au/n-GaAs Schottky barrier diodes have been fabricated. The series resistance has been measured as a function of hydrostatic pressure using the current-voltage (I-V) technique. It has been found that the series resistance increases with increasing hydrostatic pressure.