Energy spectrum of carriers in Kane type quantum wells

Babayev A.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol.35, no.1, pp.203-206, 2006 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 1
  • Publication Date: 2006
  • Doi Number: 10.1016/j.physe.2006.07.036
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.203-206


The electronic states of a Kane type semiconductor quantum well with magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. Calculations are performed for a hard-wall confinement potential and the size dependence of the effective g-values in bare InSb type quantum well for electrons and light holes are found, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased with the increasing of quantum well thickness. (c) 2006 Elsevier B.V. All rights reserved.