Energy spectrum of carriers in Kane type quantum wells
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol.35, no.1, pp.203-206, 2006 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 35 Issue: 1
- Publication Date: 2006
- Doi Number: 10.1016/j.physe.2006.07.036
- Journal Name: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.203-206
- Süleyman Demirel University Affiliated: Yes
Abstract
The electronic states of a Kane type semiconductor quantum well with magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. Calculations are performed for a hard-wall confinement potential and the size dependence of the effective g-values in bare InSb type quantum well for electrons and light holes are found, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased with the increasing of quantum well thickness. (c) 2006 Elsevier B.V. All rights reserved.