PVP/SnS2:CdS Nanofiber/n-Si Heterojunction Photodetector Produced by the Electrospinning Technique for High Photoconductivity and Ultra-High Detectivity
ACS Applied Electronic Materials, vol.8, no.12, pp.5110-5123, 2026 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 8 Issue: 12
- Publication Date: 2026
- Doi Number: 10.1021/acsaelm.6c00748
- Journal Name: ACS Applied Electronic Materials
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
- Page Numbers: pp.5110-5123
- Keywords: electrospinning, heterojunction, photodetectors, PVP/SnS2:CdS
- Süleyman Demirel University Affiliated: Yes
Abstract
This study aimed to develop a high-performance broadband photodetector by integrating an organic polymer layer of PVP (poly (vinyl alcohol)) enriched with a SnS2-CdS heterostructure onto an n-Si substrate (PVP/SnS2:CdS/n-Si). The optoelectronic properties of the fabricated device were examined at four different wavelengths (365, 395, 590, and 850 nm), covering the ultraviolet (UV) and near-infrared (NIR) regions in addition to different intensities of white light. According to the results obtained, the photodetector demonstrated competitive performance with superior detectability reaching 1.42 × 1012 Jones levels and high responsivity values reaching 0.51167 A/W. Additionally, the device's EQE value exceeding 100% has substantiated and confirmed the presence of an active photo-gain mechanism at the heterojunction interface (PVP/SnS2:CdS and/or SnS2-CdS/n-Si). The effect of this mechanism has been explained by the assumption that, through trap levels or defects at the interface, each generated photon contributes multiple carriers to the external circuit. All data obtained have been thoroughly analyzed, and it has been concluded that the developed PVP/SnS2:CdS /n-Si device offers a promising, scalable platform for optoelectronic applications requiring high sensitivity across a broad spectrum.